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| product specification www.jmnic.com silicon pnp power transistors 2SA1061 description ? with to-3pn package ? complement to type 2sc2485 ? high collector power dissipation applications ? high power audio frequency amplifier pinning pin description 1 base 2 collector;connected to mounting base 3 emitter fig.1 simplified outline (to-3pn) and symbol absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -100 v v ceo collector-emitter voltage open base -100 v v ebo emitter-base voltage open collector -5 v i c collector current (dc) -6 a i cm collector current-peak -10 a p c collector power dissipation t c =25 ?? 70 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? jm nic
product specification www.jmnic.com jm nic silicon pnp power transistors 2SA1061 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-10ma ;i b =0 -100 v v cesat collector-emitter saturation voltage i c =-4a ;i b =-0.4a -2.0 v v be base-emitter on voltage i c =-4a;v ce =-5v -1.8 v i cbo collector cut-off current v cb =-100v; i e =0 -50 | a i ebo emitter cut-off current v eb =-3v; i c =0 -50 | a h fe-1 dc current gain i c =-0.2a ; v ce =-5v 20 h fe-2 dc current gain i c =-1a ; v ce =-5v 40 200 h fe-3 dc current gain i c =-4a ; v ce =-5v 20 f t transition frequency i c =-0.5a ; v ce =-5v 20 mhz product specification www.jmnic.com jm nic silicon pnp power transistors 2SA1061 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10mm) |
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